 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Data Sheet No. 2N3507L Type 2N3507L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV Features: * General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 which Semicoa meets in all cases. Generic Part Number: 2N3507L REF: MIL-PRF-19500/349 * * * TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 50 80 5.0 3.0 1.0 5.71 Unit V V V A W mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3507L Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Emitter Cutoff Current VCE = 60 V, VEB = 4 V Collector-Emitter Cutoff Current o VCE = 60 V, VEB = 4 V, TA = +150 C Collector Current Continuous VCB = 50 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 IC Min 80 50 5.0 ----3.0 Max ------1.0 1.0 --- Unit V V V A A A ON Characteristics DC Current Gain IC = 500 mA, VCE = 1 V (pulsed) IC = 1.5 A, VCE = 2 V (pulsed) IC = 2.5 A, VCE = 3 V (pulsed) IC = 3.0 A, VCE = 5 V (pulsed) IC = 500 mA, VCE = 1 V (pulsed), TA = -55oC Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBE(sat)1 VBE(sat)2 VBE(sat)3 VCE(sat)1 VCE(sat)2 VCE(sat)3 Min 35 30 25 20 17 --0.9 --------- Max 175 150 ------1.0 1.4 2.0 0.5 1.0 1.5 Unit ----------V dc V dc V dc V dc V dc V dc Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) IC = 1.5 A, IB = 150 mA (pulsed) IC = 2.5 A, IB = 250 mA (pulsed) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) IC = 1.5 A, IB = 150 mA (pulsed) IC = 2.5 A, IB = 250 mA (pulsed) Small Signal Characteristics Magnitude of Common Emitter, Small Signal, Short Circuit Symbol |hFE| COBO CIBO Min 3.0 ----- Max 15 40 300 Unit --pF pF Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 20 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz Pulse Response Characteristics Delay Time IC = 1.5 A, IB1 = 150 mA Rise Time IC = 1.5 A, IB1 = 150 mA Storage Time IC = 1.5 mA, IB2 = IB1 = 150 mA Fall Time IC = 1.5 mA, IB2 = IB1 = 150 mA Symbol td tr ts tf Min --------- Max 15 30 55 35 Unit ns ns ns ns |
Price & Availability of 2N3507L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |